منابع مشابه
Magnetism in hafnium dioxide
Thin films of HfO2 produced by pulsed-laser deposition on sapphire, yttria-stabilized zirconia, or silicon substrates show ferromagnetic magnetization curves with little hysteresis and extrapolated Curie temperatures far in excess of 400 K. The moment does not scale with film thickness, but in terms of substrate area it is typically in the range 150–400 B nm −2. The magnetization exhibits a rem...
متن کاملThermal Reversible Breakdown and Resistivity Switching in Hafnium Dioxide
We present a model of thermal reversible breakdown via conductive filaments (CFs) in hafnium dioxide (HfO2). These CFs appear as a result of electrical pretreatment of a metal/HfO2/metal (semiconductor) nanostructure (MIM(S)). The model is based on an assumption that the thermal reversible breakdown of a CF is due to of Joule heating displaying an exponential dependence of conductivity on tempe...
متن کاملEnergy loss of proton, particle, and electron beams in hafnium dioxide films
Moni Behar, Raul C. Fadanelli, Isabel Abril, Rafael Garcia-Molina, Cristian D. Denton, Luiz C. C. M. Nagamine, and Néstor R. Arista Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves 9500, 91501-970 Porto Alegre, RS, Brazil Departament de Física Aplicada, Universitat d ́Alacant, Apartat 99, E-03080 Alacant, Spain Departamento de Física-CIOyN, Universidad de Murci...
متن کاملPerfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene
We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from...
متن کاملPlasma ion assisted deposition of hafnium dioxide using argon and xenon as process gases
Hafnium dioxide films have been produced by plasma ion assisted electron beam evaporation, utilizing argon or xenon as working gases. The optical constants of the layers have been investigated by spectrophotometry, while X-ray reflection measurements (XRR), energy dispersive X-ray spectroscopy (EDX), and transmission electron microscopy (TEM) have been performed with selected samples. The corre...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2005
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.72.024450